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Пореста графит с так покритие
  • Пореста графит с так покритиеПореста графит с так покритие
  • Пореста графит с так покритиеПореста графит с так покритие

Пореста графит с так покритие

Порестият графит с TAC покритие е усъвършенстван материал за обработка на полупроводници, осигурен от полупроводник Vetek. Порестият графит с TAC покритие комбинира предимствата на пореста графит и танталум карбид (TAC), с добра топлопроводимост и проницаемост на газа. Vetek Semiconductor се ангажира да предоставя качествени продукти на конкурентни цени.

Veteksemicon is China manufacturer & supplier who mainly produces Porous Graphite with TaC Coated with many years of experience. Hope to build business relationship with you.


Veteksemicon has launched a revolutionary semiconductor manufacturing material called Porous Graphite with TaC Coated material, a combination of porous graphite and tantalum carbide (TaC) coating. This material offers outstanding permeability and high porosity, reaching a record industry maximum of 75%. The high-purity TaC coating not only enhances corrosion and wear resistance but also provides an additional protective layer, effectively addressing processing and corrosion challenges.


Improper use of crucible materials like graphite, porous graphite, and tantalum carbide powder in high-temperature environments can lead to defects like increased carbon inclusion. Sometimes, the permeability of porous graphite may be insufficient, requiring additional holes for improved permeability. Porous graphite with high permeability faces processing, powder removal, and etching challenges.


Veteksemicon introduces a novel SiC crystal growing thermal field material, Porous Graphite with Tantalum Carbide Coating. Tantalum carbide is known for its high strength and hardness, but creating porous tantalum carbide with large porosity and high purity is a significant challenge. VeTek Semiconductor has innovatively developed porous tantalum carbide with maximum porosity reaching 75%, setting new standards in the industry.


The use of TaC-coated porous graphite can significantly improve the efficiency and quality of the semiconductor manufacturing process. Its excellent permeability ensures the stability of the material under high temperature conditions and effectively controls the increase of carbon impurities. At the same time, the high porosity design provides better gas diffusion performance to help maintain a pure growth environment.


We are committed to providing customers with excellent Porous Graphite with TaC Coated materials to meet the needs of the semiconductor manufacturing industry. Whether in research laboratories or industrial production, this advanced material can help you achieve excellent performance and reliability. Contact us today to learn more about this revolutionary material and start your journey of innovation to drive semiconductor manufacturing.


PVT method SiC Crystal Growth:

PVT method SiC Crystal Growth working diagram

Product parameter of the Porous Graphite with TaC Coated

Physical properties of Tantalum Carbide Coating
Coating Density 14.3 (g/cm³)
Specific emissivity 0.3
Thermal expansion coefficient 6.3 10-6/K
Hardness (HK) 2000 HK
Resistance 1×10-5 Ohm*cm
Thermal stability <2500℃
Graphite size changes -10~-20um
Coating thickness ≥20um typical value (35um±10um)

VeTek Semiconductor Porous Graphite with TaC Coated Production Shop

sic coated Graphite substratePorous Graphite with TaC Coated testSilicon carbide ceramic processSemiconductor process equipment



Горещи маркери: Пореста графит с так покритие
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Информация за контакт
  • Адрес

    Wangda Road, улица Зиян, окръг Вуи, град Джинхуа, провинция Жеджианг, Китай

  • Електронна поща

    anny@veteksemi.com

За запитвания относно покритие от силициев карбид, покритие от танталов карбид, специален графит или ценова листа, моля, оставете своя имейл до нас и ние ще се свържем в рамките на 24 часа.
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